1 UM6007 p-ch 60v fast switching mosfets symbol parameter rating units v ds drain-source voltage -60 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, -v gs @ -10v 1 -2.5 a i d @t c =100 continuous drain current, -v gs @ -10v 1 -2 a i dm pulsed drain current 2 -5 a eas single pulse avalanche energy 3 17 mj i as avalanche current -15.3 a p d @t c =25 total power dissipation 4 2.1 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 60 /w id -60v 170m ? -2.5a the UM6007 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM6007 meet the rohs and green product requirement,100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery bv dss r ds(on)
2 p-ch 60v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -60 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.021 --- v/ v gs =-10v , i d =-2.5a --- 140 170 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-1.5a --- 175 215 m v gs(th) gate threshold voltage -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- 4.08 --- mv/ v ds =-48v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-48v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-10v , i d =-6a --- 5.8 --- s q g total gate charge (-4.5v) --- 4.59 --- q gs gate-source charge --- 1.39 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-2a --- 1.62 --- nc t d(on) turn-on delay time --- 17.4 --- t r rise time --- 5.4 --- t d(off) turn-off delay time --- 37.2 --- t f fall time v dd =-15v , v gs =-10v , r g =3.3 , i d =-1a --- 2.4 --- ns c iss input capacitance --- 531 --- c oss output capacitance --- 59 --- c rss reverse transfer capacitance v ds =-15v , v gs =0v , f=1mhz --- 38 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-10a 7.3 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- -2.5 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- -5 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-15.3a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UM6007
3 p-ch 60v fast switching mosfets 0 2 4 6 8 00.5 11.52 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 130 150 170 190 210 246810 -v gs (v) r dson (m ? ) i d =-2a 0 2 4 6 0.0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0 2.5 5 7.5 10 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-20v i d =-2a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j UM6007
4 p-ch 60v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 -v ds (v) -i d (a) 10us 100us 10ms 100ms dc t c =25 single pulse ` 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.02 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UM6007
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